BC847B View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'BC847B' PDF : 4 Pages View PDF
BC847B / BC847C
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
• Device mounted on a PCB area of 1 cm2.
Max
500
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 30 V
VCB = 30 V
TC = 150 oC
IEBO
V(BR)CBO
V(BR)CEO∗
V(BR)EBO
VCE(sat)∗
Emitter Cut-off Current
(IC = 0)
Collector-Base
Breakdown Voltage
(IE = 0)
Collector-Emitter
Breakdown Voltage
(IB = 0)
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 10 µA
IC = 2 mA
IE = 10 µA
IC = 10 mA
IC = 100 mA
IB = 0.5 mA
IB = 5 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 10 mA
IC = 100 mA
IB = 0.5 mA
IB = 5 mA
VBE(on)∗ Base-Emitter On
Voltage
IC = 2 mA
IC = 10 mA
VCE = 5 V
VCE = 5 V
hFE∗ DC Current Gain
IC = 10 µA
for BC847B
for BC847C
IC = 2 mA
for BC847B
for BC847C
VCE = 5 V
VCE = 5 V
fT
Transition Frequency IC = 10 mA VCE = 5 V f = 100MHz
CCBO
Collector-Base
Capacitance
IE = 0 VCB = 10 V f = 1 MHz
NF Noise Figure
VCE = 5 V IC = 0.2 mA f = 1KHz
∆f = 200 Hz RG = 2 KΩ
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Min. Typ.
50
45
6
0.58
0.09
0.2
0.7
0.9
0.66
150
270
200 290
420 520
100
2.5
2
Max.
15
5
100
0.25
0.6
0.7
0.77
450
800
10
Unit
nA
µA
nA
V
V
V
V
V
V
V
V
V
MHz
pF
dB
2/4
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