BC869 View Datasheet(PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.
Part Name
Description
MFG CO.
'BC869' PDF : 2 Pages View PDF
1
2
BC869 Typical Characteristics
Plastic-Encapsulate Transistors
handbIoCo−k2, .h4alfpage
(A)
−2.0
−1.6
−1.2
−0.8
−0.4
MLE317
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
0
0
−1
−2
−3
BC869-16.
(1) IB = −18 mA.
(2) IB = −16.2 mA.
(3) IB = −14.4 mA.
(4) IB = −12.6 mA.
(5) IB = −10.8 mA.
(6) IB = −9.0 mA.
(7) IB = −7.2 mA.
(8) IB = −5.4 mA.
−4
−5
VCE (V)
(9) IB = −3.6 mA.
(10) IB = −1.8 mA.
Fig.5 Collector current as a function of
collector-emitter voltage; typical values.
handboo−k1, halfpage
VBE
(V)
MLE314
−10−1
−10−4
−10−3 −10−2 −10−1
−1
−10
IC (A)
BC869-16.
VCE = −1 V.
Fig.6 Base-emitter voltage as a function of
collector current; typical values.
handbo1o0k3, halfpage
hFE
MLE319
−1
handbook, halfpage
VCEsat
(V)
−10−1
MLE320
102
−10−4
−10−3
−10−2
−10−1
BC869-16.
VCE = −1 V.
−1
−10
IC (A)
Fig.7 DC current gain as a function of collector
current; typical values.
−10−2
−10−3
−10−4
−10−3
−10−2
−10−1
BC869-16.
IC/IB = 10.
−1
−10
IC (A)
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P2
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