BCP55-16 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'BCP55-16' PDF : 4 Pages View PDF
BCP55-16 / BCP56-16
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
• Device mounted on a PCB area of 1 cm2
Max
89.3
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 30 V
VCB = 30 V TC = 125 oC
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = 100 µA
for BCP55-16
for BCP56-16
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 20 mA
for BCP55-16
for BCP56-16
V(BR)CER
Collector-Emitter
Breakdown Voltage
(RBE = 1 KΩ)
IC = 100 µA
for BCP55-16
for BCP56-16
V(BR)EBO
VCE(sat)∗
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
IE = 10 µA
IC = 500 mA IB = 50 mA
VBE(on)∗ Base-Emitter On
Voltage
IC = 500 mA VCE = 2 V
hFE∗ DC Current Gain
IC = 5 mA
IC = 150 mA
IC = 500 mA
VCE = 2 V
VCE = 2 V
VCE = 2 V
fT
Transition Frequency IC = 10 mA VCE = 5 V f = 20 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
Min. Typ.
60
100
60
80
60
100
5
40
100
25
120
Max.
100
10
0.5
1
250
Unit
nA
µA
V
V
V
V
V
V
V
V
V
MHz
2/4
Share Link: 
