BD130 View Datasheet(PDF) - Comset Semiconductors

Part Name

Description

MFG CO.

BD130

NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS

Comset Semiconductors 

1 2 3

NPN BD130

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

VCEO(BR)

VCE(SAT)

ICEX

Collector-Emitter Breakdown

Voltage (*)

Collector-Emitter Saturation

Voltage (*)

Collector-Emitter Cutoff Current

IEBO

Emitter-Base Cutoff Current

VBE

Base-Emitter Voltage (*)

fT

Transition Frequency

h21E

Static Forward Current Transfer

Ratio (*)

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

Test Condition(s) Min Typ Max Unit

IC=200 mA, IB=0

60

V

IC=4 A, IB=0.4 A

- 0.5 1.1 V

VCE=100 V, VBE=-1.5 V -

- 0.5

VCE=100 V, VBE=-1.5 V

TCASE=150°C

-

-

30 mA

VEB=7 V

-

- 5.0 mA

IC=4.0 A, VCE=4.0V

- 0.95 1.8 V

IC=0.1 A, VCE=4 V

1.1

MHz

VCE=4.0 V, IC=4.0 A

20 - 70 -

15/11/2012

COMSET SEMICONDUCTORS

2|3

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