BD176 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
'BD176' PDF : 3 Pages View PDF
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD176 BD178 BD180
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A
VBE
Base-emitter on voltage
IC=-1A ; VCE=-2V
VCEO(SUS)
Collector-emitter
sustaining voltage
BD176
BD178 IC=-0.1A; IB=0
BD180
BD176 VCB=-45V; IE=0
ICBO
Collector cut-off current BD178 VCB=-60V; IE=0
BD180 VCB=-80V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-150mA ; VCE=-2V
hFE-2
DC current gain
IC=-1A ; VCE=-2V
fT
Transition frequency
IC=-250mA; VCE=-10V
hFE-1 Classifications
6
10
40-100
63-160
16
100-250
MIN TYP. MAX UNIT
-0.8
V
-1.3
V
-45
-60
V
-80
-100 μA
-1
mA
40
250
15
3
MHz
※ classification 16 :only BD176
2
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