BDT63C View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
MFG CO.
'BDT63C' PDF : 5 Pages View PDF
SEMICONDUCTORS
BDT63-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Min Typ Max Unit
VBE(on)
hFE
VECF
COB
BDT63
Base-Emitter Voltage
(*)
IC= 3 A, VCE= 3 V
BDT63A
BDT63B
-
- 2.5 V
BDT63C
BDT63
VCE= 3.0 V, IC= 3 A
BDT63A
BDT63B
1000
-
-
DC Current Gain (*)
BDT63C
BDT63
-
VCE= 3.0 V, IC= 10 A
BDT63A
BDT63B
- 3000 -
BDT63C
BDT63
C-E Diode Forward
Voltage
IF= 3 A
BDT63A
BDT63B
-
-
2
V
BDT63C
BDT63
Output Capacitance
IE= 0, VCB = 10 V
ftest= 1MHz
BDT63A
BDT63B
- 100 -
pF
BDT63C
SWITCHING TIMES
Symbol
Ratings
ton
turn-on time
toff
turn-off time
Test Condition(s)
IC= 3 A , VCC= 10 V
IB1 = -IB2 = 12 mA
Min Typ Max Unit
-
-
1
5
2.5
10
µs
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
26/09/2012
COMSET SEMICONDUCTORS
4|5
Share Link: 
