BDT65A View Datasheet(PDF) - Comset Semiconductors

Part Name

Description

MFG CO.

BDT65A

SILICON DARLINGTON POWER TRANSISTORS

Comset Semiconductors 

1 2 3 4 5

SEMICONDUCTORS

BDT65-A-B-C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

VBE(on)

Base-Emitter Voltage (*) IC= 5 A, VCE= 4 V

VECF

C-E Diode Forward

Voltage

IF= 5 A

IF= 12 A

VCE= 4 V, IC= 1 A

hFE

DC Current Gain (*)

VCE= 4 V, IC= 5 A

VCE= 4 V, IC= 12 A

COB

Output Capacitance

IE= 0, VCB = 10 V

ftest= 1MHz

BDT65

BDT65A

BDT65B

BDT65C

BDT65

BDT65A

BDT65B

BDT65C

BDT65

BDT65A

BDT65B

BDT65C

BDT65

BDT65A

BDT65B

BDT65C

BDT65

BDT65A

BDT65B

BDT65C

BDT65

BDT65A

BDT65B

BDT65C

BDT65

BDT65A

BDT65B

BDT65C

Min Typ Max Unit

-

- 2.5 V

-

2

V

-

2

-

- 1500 -

1000 -

-

-

- 1000 -

- 200 - pF

SWITCHING TIMES

Symbol

Ratings

Test Condition(s)

ton

turn-on time

toff

turn-off time

IC= 5 A , VCC= 30 V

IB1 = -IB2 = 20 mA

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

26/09/2012

COMSET SEMICONDUCTORS

Min Typ Max Unit

-

-

1

6

2.5

10

µs

4|5

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