BDV66C View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
MFG CO.
'BDV66C' PDF : 4 Pages View PDF
BDV66-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
PT
Power Dissipation Tmb = 25° C
TJ
Junction Temperature
TS
Storage Temperature
BDV66
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
Value
175
150
-65 to +150
Unit
Watts
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Rthj-c
Thermal Resistance, Junction to Case
Value
0.625
Unit
°C / W
SWITCHING TIMES
Symbol
Ratings
Test Condition(s)
ton
turn-on time
toff
turn-off time
IC= 10 A , VCC= 12 V
IB1 = -IB2 = 40 mA
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5 %
Value
Min Typ Max
-
1
-
- 3.5 -
Unit
µs
26/09/2012
COMSET SEMICONDUCTORS
2/4
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