BDX53B View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'BDX53B' PDF : 7 Pages View PDF
BDX53B - BDX53C - BDX54B - BDX54C
2
Electrical characteristics
Electrical characteristics
Note:
(TCASE=25°C unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
VCEO(sus)(1)
Collector-emitter
sustaining voltage (IB = 0)
IC = 100 mA
for BDX53B - BDX54B
for BDX53C - BDX54C
80
100
V
V
ICBO
Collector cut-off current
(IE = 0)
VCB = 80 V
for BDX53B - BDX54B
VCB = 100 V
for BDX53C - BDX54C
0.2 mA
0.2 mA
ICEO
Collector cut-off current
(IB = 0)
VCE = 40 V
for BDX53B - BDX54B
VCE = 50 V
for BDX53C - BDX54C
0.5 mA
0.5 mA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
2 mA
VCE(sat)(1)
Collector-emitter saturation
voltage
IC = 3 A;
IB = 12 mA
2
V
VBE(sat)(1)
Base-emitter saturation
voltage
IC = 3 A;
IB = 12 mA
2.5 V
hFE(1)
DC current gain
IC = 3 A;
VCE = 3 V 750
VF(1)
Diode forward voltage
IF = 3 A;
IF = 8 A;
1.8 2.5 V
2.5
V
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
For PNP types voltage and current values are negative.
3/7
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