BFR92T View Datasheet(PDF) - Infineon Technologies

Part Name

Description

MFG CO.

BFR92T

NPN Silicon RF Transistor

Infineon Technologies 

1 2 3 4 5 6 7

BFR92T

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-emitter cutoff current

VCE = 20 V, VBE = 0

Collector-base cutoff current

VCB = 10 V, IE = 0

Emitter-base cutoff current

VEB = 2.5 V, IC = 0

DC current gain

IC = 15 mA, VCE = 8 V

V(BR)CEO 15

-

-V

ICES

-

-

10 µA

ICBO

-

- 100 nA

IEBO

-

- 100 µA

hFE

40 100 200 -

2

Aug-08-2001

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