BSM15GD60DN2 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

MFG CO.

BSM15GD60DN2

IGBT Power Module

Infineon Technologies 

1 2 3 4 5 6 7 8 9

BSM 15 GD 60 DN2

Typ. output characteristics

IC = f (VCE)

parameter: tp = 80 µs, Tj = 25 °C

30

A

26

17V

IC

24

15V

13V

22

11V

9V

20

7V

18

16

14

12

10

8

6

4

2

0

0

1

2

3

V

5

VCE

Typ. transfer characteristics

IC = f (VGE)

parameter: tp = 80 µs, VCE = 20 V

30

A

26

IC

24

22

20

18

16

14

12

10

8

6

4

2

0

0

2

4

6

8 10 V 14

VGE

Typ. output characteristics

IC = f (VCE)

parameter: tp = 80 µs, Tj = 125 °C

30

A

26

17V

IC

24

15V

13V

22

11V

9V

20

7V

18

16

14

12

10

8

6

4

2

0

0

1

2

3

V

5

VCE

Semiconductor Group

5

Jan-09-1997

Share Link: