BSM 25 GD 120 D2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 1 mA
4.5
5.5
6.5
Collector-emitter saturation voltage
VCE(sat)
VGE = 15 V, IC = 25 A, Tj = 25 °C
-
2.5
3
VGE = 15 V, IC = 25 A, Tj = 125 °C
-
3.1
3.7
Zero gate voltage collector current
ICES
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
-
0.5
0.8
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
-
2
-
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
-
-
180
AC Characteristics
Transconductance
VCE = 20 V, IC = 25 A
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
gfs
10
Ciss
-
Coss
-
Crss
-
-
-
1650 -
250
-
110
-
Unit
V
mA
nA
S
pF
2
Oct-20-1997