BSM25GD120D2 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

MFG CO.

BSM25GD120D2

IGBT Power Module

Infineon Technologies 

1 2 3 4 5 6 7 8 9

BSM 25 GD 120 D2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

td(on)

VCC = 600 V, VGE = 15 V, IC = 25 A

RGon = 47 Ω

-

75

Rise time

tr

VCC = 600 V, VGE = 15 V, IC = 25 A

RGon = 47 Ω

-

65

Turn-off delay time

td(off)

VCC = 600 V, VGE = -15 V, IC = 25 A

RGoff = 47 Ω

-

420

Fall time

tf

VCC = 600 V, VGE = -15 V, IC = 25 A

RGoff = 47 Ω

-

50

ns

150

130

630

100

Free-Wheel Diode

Diode forward voltage

IF = 25 A, VGE = 0 V, Tj = 25 °C

IF = 25 A, VGE = 0 V, Tj = 125 °C

Reverse recovery time

IF = 25 A, VR = -600 V, VGE = 0 V

diF/dt = -800 A/µs, Tj = 125 °C

Reverse recovery charge

IF = 25 A, VR = -600 V, VGE = 0 V

diF/dt = -800 A/µs

Tj = 25 °C

Tj = 125 °C

VF

-

-

trr

-

Qrr

-

-

V

2.3

2.8

1.8

-

µs

0.13 -

µC

2.3

-

6

-

Semiconductor Group

3

Feb-10-1997

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