BSR12 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
'BSR12' PDF : 12 Pages View PDF
Philips Semiconductors
PNP switching transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
note 1
Note
1. Transistor mounted on a ceramic substrate 8 × 10 × 0.7 mm.
Product specification
BSR12
MIN.
−
−
−
−
−
−
−65
−
MAX.
−15
−15
−3
−100
−200
250
+150
150
UNIT
V
V
V
mA
mA
mW
°C
°C
VALUE
500
UNIT
K/W
1999 Jul 23
3
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