BTA312B-800C View Datasheet(PDF) - WeEn Semiconductors
Part Name
Description
MFG CO.
'BTA312B-800C' PDF : 13 Pages View PDF
BTA312B-800C
3Q Hi-Com Triac
Rev.01 - 09 April 2019
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable
plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt
can occur. This "series C" triac will commutate the full RMS current at the maximum rated junction
temperature without the aid of a snubber.
2. Features and benefits
• 3Q technology for improved noise immunity
• High commutation capability with maximum false trigger immunity
• High voltage capability
• Less sensitive gate for high noise immunity
• Planar passivated for voltage ruggedness and reliability
• Surface mountable package
• Triggering in three quadrants only
• Very high immunity to false turn-on by dV/dt
3. Applications
• Electronic thermostats (heating and cooling)
• High power motor controls e.g. washing machines and vacuum cleaners
• Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDRM
IT(RMS)
ITSM
Tj
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
junction temperature
full sine wave; Tmb ≤ 100 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
Fig 4; Fig 5
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
-
-
800 V
-
-
12 A
-
-
100 A
-
-
110 A
-
-
125 °C
2
-
35 mA
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