BTB24-400B View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'BTB24-400B' PDF : 4 Pages View PDF
BTB24 B
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-a) Junction to ambient
Rth (j-c) DC Junction to case for DC
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz)
Value
60
1.5
1.1
Unit
°C/W
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol
IGT
Test Conditions
VD=12V (DC) RL=33Ω
VGT
VGD
IL
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
IG=1.2 IGT
IH *
VTM *
IDRM
IRRM
dV/dt *
(dV/dt)c *
IT= 500mA gate open
ITM= 35A tp= 380µs
VDRM Rated
VRRM Rated
Linear slope up to VD=67%VDRM
gate open
(dI/dt)c = 11.1A/ms
Tj=25°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
Quadrant
I-II-III-IV
I-II-III
IV
I-II-III-IV
I-II-III-IV
I-III-IV
II
MIN
MAX
MAX
MAX
MIN
MAX
MAX
MAX
MAX
MAX
MIN
Tj=125°C
MIN
Suffix
5
50
100
1.3
0.2
70
150
50
1.6
5
2
750
10
Unit
mA
V
V
mA
mA
V
µA
mA
V/µs
V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
Fig. 1: Maximum power dissipation versus RMS
on-state current.
Fig. 2: Correlation between maximum power dissipation
and maximum allowable temperatures (Tamb and
Tcase) for different thermal resistances heatsink +
contact.
P(W)
35
30
25
20
15
10
5 α = 30°
0
0
α = 180°
α = 120°
α = 60°
α = 90°
IT(rms)(A)
5
10
15
180°
α
α
20
25
P(W)
35
30
Rth=3°C/W
25
20
15
10
5 α = 180°
0
0
20
Rth=2°C/W
Tcase (°C)
Rth=1°C/W
Rth=0°C/W
90
100
110
Tamb(°C)
120
125
40 60 80 100 120 140
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