BUH515 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
'BUH515' PDF : 3 Pages View PDF
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.25A
VBEsat Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=5A ;IB=1.25A
VCE=1500V; VBE=0
Tj=125℃
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=5V
Switching times
ts
Storage time
tf
Fall time
IC=5A;IB1=1.25A;IB2=2.5A;
VCC=400V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
Product Specification
BUH515
MIN TYP. MAX UNIT
700
V
10
V
1.5
V
1.3
V
0.2
2
mA
100 μA
6
12
2.7
3.9
μs
190 280 ns
MAX
2.5
UNIT
℃/W
2
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