BUL310 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'BUL310' PDF : 6 Pages View PDF
BUL310
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
1.65
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 1000 V
VCE = 1000 V Tj = 125 oC
ICEO
Collector Cut-off
Current (IB = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VEBO
Emitter-Base Voltage
(IC = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VBE(sat)∗ Base-Emitter
Saturation Voltage
hFE∗ DC Current Gain
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
VCE = 500 V
IC = 100 mA
L= 25 mH
IE = 10 mA
IC = 1 A
IC = 2 A
IC = 3 A
IB = 0.2 A
IB = 0.4 A
IB = 0.6 A
IC = 1 A
IC = 2 A
IC = 3 A
IB = 0.2 A
IB = 0.4 A
IB = 0.6 A
IC = 10 mA VCE = 5 V
IC = 3 A
VCE = 2.5 V
IC = 2 A
VBE(off) = -5 V
VCL = 250 V
(see figure 1)
IB1 = 0.4 A
RBB = 0 Ω
L = 200 µH
INDUCTIVE LOAD
IC = 2 A
ts
Storage Time
VBE(off) = -5V
tf
Fall Time
VCL = 250 V
Tj = 125 oC
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IB1 = 0.4 A
RBB = 0 Ω
L = 200 µH
(see figure 1)
Min. Typ.
500
9
10
6
10
1.2
80
1.8
150
Max.
100
500
250
0.5
0.7
1.1
1
1.1
1.2
14
1.9
160
Unit
µA
µA
µA
V
V
V
V
V
V
V
V
µs
ns
µs
ns
Safe Operating Areas
Derating Curve
2/6
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