BUL381 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'BUL381' PDF : 7 Pages View PDF
BUL381 / BUL382
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-Case
Rthj- amb Thermal Resistance Junction-Ambient
M ax
Max
1.78
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICES Collect or Cut-off
Current (VBE = 0)
VCE = 800 V
VCE = 800 V Tj = 125 oC
ICEO
VCEO(sus)
Collector Cut-off
Current (IB = 0)
Co lle ct or- Em it t er
Sustaining Voltage
VCE = 400 V
IC = 100 mA L = 25 mH
VEBO
VCE(sat )∗
Emitter-Base Voltage
(IC = 0)
Co lle ct or- Em it t er
Saturation Voltage
VBE(s at)∗
hFE∗
Ba se-Em it t er
Saturation Voltage
DC Current G ain
IE = 10 mA
IC = 1 A
IC = 2 A
IC = 3 A
IB = 0.2 A
IB = 0.4 A
IB = 0.8 A
IC = 1 A IB = 0.2 A
IC = 2 A IB = 0.4 A
IC = 2 A
VCE = 5 V
IC = 10 mA VCE = 5 V
RESISTIVE LOAD
tON
Turn-on T ime
ts
Storage Time
tf
Fall Time
VCC = 250 V IC = 2 A
IB1 = 0.4 A
IB2 = -0.4 A
(for BUL381only)
tp = 30 µs
RESISTIVE LOAD
tON
Turn-on T ime
ts
Storage Time
tf
Fall Time
VCC = 250 V IC = 2 A
IB1 = 0.4 A IB2 = -0.4 A
(for BUL382 only)
tp = 30 µs
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 2 A VCL = 250 V
IB1 = 0.4 A IB2 = -0.8 A
L = 200 µH
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 2 A VCL = 250 V
IB1 = 0.4 A IB2 = -0.8 A
L = 200 µH Tj = 125 oC
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ.
400
9
8
10
1.4
1.7
1.7
75
2.6
150
M a x.
100
500
250
0.5
0.7
1.1
1.1
1.2
1
2.2
800
1
2.5
800
2.6
120
Unit
µA
µA
µA
V
V
V
V
V
V
V
µs
µs
ns
µs
µs
ns
µs
ns
µs
ns
2/7
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