BUL381D View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'BUL381D' PDF : 6 Pages View PDF
BUL381D
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
1.78
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE = 800 V
VCE = 800 V Tj = 125 oC
ICEO
Collector Cut-off
Current (IB = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VEBO
Emitter-Base Voltage
(IC = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VCE = 400 V
IC = 100 mA L = 25 mH
IE = 10 mA
IC = 1 A
IC = 2 A
IC = 3 A
IB = 0.2 A
IB = 0.4 A
IB = 0.75 A
VBE(sat)∗
hFE∗
Base-Emitter
Saturation Voltage
DC Current Gain
IC = 1 A IB = 0.2 A
IC = 2 A IB = 0.4 A
IC = 2 A VCE = 5 V
IC = 10 mA VCE = 5 V
RESISTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 2 A VCC = 250 V tp = 30 µs
IB1 = - IB2 = 0.4 A
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 2 A
VBE(off) = -5 V
VCL = 250 V
Tj = 125 oC
Vf
Diode Forward Voltage IC = 2 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IB1 = 0.4 A
RBB = 0 Ω
L = 200 µH
Min.
400
9
8
10
1.5
Typ.
1.3
100
Max.
100
500
250
0.5
0.7
1.1
1.1
1.2
2.5
0.8
2.5
Unit
µA
µA
µA
V
V
V
V
V
V
V
µs
µs
µs
ns
V
Safe Operating Area
Derating Curve
2/6
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