BUL38D View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
'BUL38D' PDF : 2 Pages View PDF
1
2
SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 450V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 0.5V(Max) @ IC= 1.0A
·Very High Switching Speed
APPLICATIONS
·Designed for use in lighting applications and low cost switch-
mode power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
800
V
VCEO Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-peak tp<5ms
10
A
IB
Base Current-Continuous
2
A
IBM
Base Current-peak tp<5ms
PC
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
4
A
80
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.56 ℃/W
Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W
SPTECH website：www.superic-tech.com
BUL38D
1
Share Link: 
