BUT11 View Datasheet(PDF) - SavantIC Semiconductor
Part Name
Description
MFG CO.
'BUT11' PDF : 3 Pages View PDF
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BUT11
BUT11A
IC=0.1A; IB=0, L=25mH
VCEsat
Collector-emitter
saturation voltage
BUT11
BUT11A
IC=3A; IB=0.6A
IC=2.5A; IB=0.5A
VBEsat
ICES
IEBO
Base-emitter
saturation voltage
BUT11
BUT11A
Collector cut-off current
Emitter cut-off current
IC=3A; IB=0.6A
IC=2.5A; IB=0.5A
VCE=Rated VCES ;VBE=0
Tj=125
VEB=9V; IC=0
hFE-1
DC current gain
IC=5mA ; VCE=5V
hFE-2
DC current gain
IC=0.5A ; VCE=5V
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
Switching times inductive load
ts
Storage time
tf
Fall time
For BUT11
IC=3A ;IB1=- IB2=0.6A
For BUT11A
IC=2.5A; IB1=- IB2=0.5A
For BUT11
IC=3A ;IB=0.6A
For BUT11A
IC=2.5A ;IB =0.5A
Product Specification
BUT11 BUT11A
MIN TYP. MAX UNIT
400
V
450
1.5
V
1.3
V
1.0
2.0
mA
10
mA
10
35
10
35
1.0
µs
4.0
µs
0.8
µs
1.4
µs
0.15
µs
2
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