BUV23 View Datasheet(PDF) - Comset Semiconductors

Part Name

Description

MFG CO.

BUV23

POWER SWITCH APPLICATIONS

Comset Semiconductors 

1 2

NPN BUV23

IEBO

hFE

VCE(SAT)

VBE(SAT)

Emitter Cutoff Current

DC Current Gain (1)

Collector-Emitter

saturation Voltage (1)

Base-Emitter saturation

Voltage (1)

VEB=5.0 V, IC=0

IC=8 A , VCE=4.0 V

IC=16 A , VCE=4.0 V

IC=8 A , IB=1.6 A

IC=16 A , IB=3.2 A

IC=16 A , IB=3.2 A

Symbol

fT

ton

Ratings

Transition frequency

Turn-on time

ts

Storage time

tf

File time

Test Condition(s)

VCE=15 V , IC=2 A , f=10 MHz

IC=16 A , IB=3.2 A

IC=16 A

IB1 = -IB2 =3.2 A

(1) Pulse Duration = 300 µs, Duty Cycle <= 2%

MECHANICAL DATA CASE TO-3

DIMENSIONS

mm

inches

A

25,51 1,004

B

38,93

1,53

C

30,12

1,18

D

17,25

0,68

E

10,89

0,43

G

11,62

0,46

H

8,54

0,34

L

1,55

0,6

M

19,47

0,77

N

1

0,04

P

4,06

0,16

Pin 1 :

Pin 2 :

Case :

Base

Emitter

Collector

- - 1 mA

15 - 60

8- -

-

- 0.2 0.8

- 0.35 1

V

- 1.15 1.5

Min Typ Mx Unit

8- -

MHz

- 0.55 1.3

- 1.7 2.5

µs

- 0.26 1.2

Information furnished is believed to be accurate and reliable. However, CS assumes no responsability

for the consequences of use of such information nor for errors that could appear.

Data are subject to change without notice.

COMSET SEMICONDUCTORS

2/2

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