BUX80 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
MFG CO.
'BUX80' PDF : 3 Pages View PDF
NPN BUX80
hFE
VCE(SAT)
VBE(SAT)
DC Current Gain (1)
Collector-Emitter
saturation Voltage (1)
Base-Emitter saturation
Voltage (1)
IC=1.2 A , VCE=5.0 V
IC=5 A , IB=1 A
IC=8 A , IB=2.5 A
IC=5 A , IB=1 A
IC=8 A , IB=2.5 A
Symbol
Ratings
ton
Turn-on time
ts
Storage time
tf
File time
Test Condition(s)Sec
IC=5 A , IB=1 A , VCC=250 V
IC=5 A , VCC=250 V
IB1 =1A , -IB2 =2 A
IC=5 A , VCC=-250 V
IB1 =1A , -IB2 =2 A
(1) Pulse Duration = 300 µs, Duty Cycle <= 1.5%
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
A
25,51 1,004
B
38,93
1,53
C
30,12
1,18
D
17,25
0,68
E
10,89
0,43
G
11,62
0,46
H
8,54
0,34
L
1,55
0,6
M
19,47
0,77
N
1
0,04
P
4,06
0,16
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
- 30 -
-
- - 1.5
-
-
-3
- 1.4
V
- - 1.8
Min Typ Mx Unit
- - 0.5
- - 3.5 µs
- - 0.5
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
3/2
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