Qdatasheet_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

BYC10L View Datasheet(PDF) - Unisonic Technologies

Part Name
Description
MFG CO.
BYC10L
UTC
Unisonic Technologies UTC
'BYC10L' PDF : 3 Pages View PDF
1 2 3
BYC10-600
Preliminary
DIODE
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Peak Repetitive Reverse Voltage
VRRM
600
V
Crest Working Reverse Voltage
VRWM
600
V
Continuous Reverse Voltage TTab 114°C
VR
500
V
Average Forward Current
δ =0.5; with reapplied VRRM(max);
TTab 78°C
IF(AV)
10
A
Repetitive Peak Forward
Current
δ =0.5; with reapplied VRRM(max);
TTab 78°C
IFRM
20
A
t = 10ms
IFSM
65
A
Non-Repetitive Peak
t = 8.3ms
Forward Current.
sinusoidal; TJ =150°C prior to
71
A
surge with reapplied VRWM(max)
Operating Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Tab
SYMBOL
θJA
θJB
RATINGS
60
2
„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT
K/W
K/W
PARAMETER
Forward Voltage
Reverse Current
Reverse Recovery Time
Peak Reverse Recovery Current
Forward Recovery Voltage
SYMBOL
TEST CONDITIONS
MIN
IF =10A, TJ =150°C
VF IF =20A, TJ =150°C
IF =10A
IR
VR=600V
VR=500V, TJ=100°C
IF =1A, VR=30V, dIF/dt=50A/μs
tRR
IF=10A, VR=400V, dIF/dt=500A/μs TJ=100°C
IRRM
IF=10A,VR=400V, dIF/dt=100A/μs, TJ=125°C
IF=10A,VR=400V, dIF/dt=500A/μs, TJ=125°C
VFR IF =10A, dIF/dt=100A/μs
TYP
1.4
1.7
2.0
9
1.1
35
19
32
3
9.5
8
MAX UNIT
1.8 V
2.3 V
2.9 V
200 µA
3.0 mA
55 ns
ns
40 ns
7.5 A
12 A
11 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-023.b
Share Link: GO URL

All Rights Reserved © qdatasheet.com  [ Privacy Policy ] [ Contact Us ]