BYM26B View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.
Part Name
Description
MFG CO.
BYM26B
Thinki Semiconductor Co., Ltd.
'BYM26B' PDF : 2 Pages View PDF
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BYM26A thru BYM26E
Pb Free Plating Product
BYM26A/BYM26B/BYM26C/BYM26D/BYM26E
Pb
2.3 Amperes Glass Passivated Ultra Fast Recovery Rectifier Diode
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
DO-201AD/DO-27
Unit: inch(mm)
.052(1.3)
.048(1.2)
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
260 oC /10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs.,(2.3kg) tension
Weight: 1.9 gram approximately
.210(5.3)
.188(4.8)
Maximun Ratings and Electrical Characteristics at 25 °C
Marking Code
BYM26A BYM26B BYM26C BYM26D BYM26E
VRRM
VRMS
VDC
IF(AV)
IFRM
Peak Recurrent Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Forward Current at Tamb = 55 °C
Recurrent Peak Forward Current
200
400
600
800
1000
140
280
420
560
700
200
400
600
800
1000
2.3 A
19 A
IFSM 10 ms.Peak Sine Wave Forward Surge Current
trr
Max. Reverse Recovery Time From
IF = 0.5 A; IR = 1 A; Irr = 0.25 A
VBR Avalanche breakdown voltage at 100 µA (V) >300
Tj
Operating Temperature Range
Tstg Storage Temperature Range
45 A
30 ns
75 ns
>500
>700
>900
-65 to +175 °C
-65 to +175 °C
>1100
ERSM
Maximum non Repetitive Peak
Reverse Avalanche Energy.
IR = 1 A; Tj = 25 °C
20 mJ
Electrical Characteristics at Tamb = 25 °C
at 25 °C
VF
Max. Forward Voltage Drop at IF = 2 A at 175 °C
IR
Rth (j-a)
Max. Reverse Current at VRRM
at 25°C
at 165 °C
Max. Thermal Resistance (l = 10 mm)
2.65 V
1.34 V
5 µA
150 µA
30 °C/W
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/
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