C03DE170HP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
C03DE170HP
STMicroelectronics
'C03DE170HP' PDF : 9 Pages View PDF
STC03DE170HP
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICS(SS)
Collector-source current
(VBS =VGS =0V)
VCS(SS) =1700V
100 µA
IBS(OS)
Base-source current
(IC =0, VGS =0V)
VBS(OS) =30V
10 µA
ISB(OS)
Source-base current
(IC =0, VGS =0V)
VSB(OS) =9V
100 µA
Gate-source leakage
IGS(OS) (VBS =0V)
VGS = ± 20V
500 nA
VCS(ON)
Collector-source ON
voltage
VGS =10V IC =3A IB =0.6A
VGS =10V IC =1A IB =100mA
1 1.2 V
0.3 0.6 V
hFE DC current gain
VGS =10V VCS =1V IC =3A
VGS =10V VCS =1V IC =1A
5
10 14
VBS(ON)
Base-source ON
voltage
VGS =10V IC =3A IB =0.6A
VGS =10V IC =1A IB =100mA
1 1.2 V
1
V
VGS(th) Gate threshold voltage VBS =VGS IB =250µA
1.5
3
V
Ciss Input capacitance
VCS =25V f =1MHz
VGS=0V
750
pF
QGS(tot) Gate-source Charge
VCS=15V
VCB=0V
VGS=10V
IC =4A
12.5
nC
INDUCTIVE LOAD
VGS =10V
RG =47Ω
ts
Storage time
VClamp =1360V tp =4µs
tf
Fall time
IC =3A
IB =0.6A
1000
ns
15
ns
INDUCTIVE LOAD
VGS =10V
RG =47Ω
ts
Storage time
VClamp =1360V tp =4µs
tf
Fall time
IC =3A
IB =0.3A
590
ns
15
ns
VCC =VClamp =400V
VCS(dyn)
Collector-source
dynamic voltage
(500ns)
VGS =10V
IB = 0.1A
IC =1.5A
RG =47Ω
9.5
V
tpeak =500ns
IBpeak =3A
3/9
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