BSM 75 GB 170 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 5 mA
4.8
5.5
6.2
Collector-emitter saturation voltage
VCE(sat)
VGE = 15 V, IC = 75 A, Tj = 25 °C
-
3.4
3.9
VGE = 15 V, IC = 75 A, Tj = 125 °C
-
4.6
5.3
Zero gate voltage collector current
ICES
VCE = 1700 V, VGE = 0 V, Tj = 25 °C
-
0.5
0.75
VCE = 1700 V, VGE = 0 V, Tj = 125 °C
-
2
-
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
-
-
400
AC Characteristics
Transconductance
VCE = 20 V, IC = 75 A
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
gfs
27
Ciss
-
Coss
-
Crss
-
-
-
11
-
1
-
0.28 -
Unit
V
mA
nA
S
nF
2
Oct-27-1997