C8051F327 View Datasheet(PDF) - Silicon Laboratories
Part Name
Description
MFG CO.
'C8051F327' PDF : 141 Pages View PDF
C8051F326/7
3. Global DC Electrical Characteristics
Table 3.1. Global DC Electrical Characteristics
–40 to +85 °C, 25 MHz System Clock unless otherwise specified.
Parameter
Conditions
Min
Typ
Max
I/O Supply Voltage (VIO)1,2
1.8
3.3
3.6
Core Supply Voltage (VDD)3
2.7
3.3
3.6
Core Supply Current with CPU VDD = 3.3 V, Clock = 24 MHz —
11
—
Active
VDD = 3.3 V, Clock = 3 MHz
—
1.9
—
VDD = 3.3 V, Clock = 32 kHz
—
20
—
Core Supply Current with CPU VDD = 3.3 V, Clock = 24 MHz —
4.4
—
Inactive (not accessing Flash) VDD = 3.3 V, Clock = 3 MHz
—
0.83
—
VDD = 3.3 V, Clock = 32 kHz
—
13
—
Digital Supply Current (sus-
Oscillator not running
pend mode or shutdown mode)
Digital Supply RAM Data Reten-
tion Voltage
SYSCLK (System Clock)4
TSYSH (SYSCLK High Time)
TSYSL (SYSCLK Low Time)
Specified Operating Tempera-
ture Range
—
< 0.1
—
—
1.5
—
0
—
25
18
—
—
18
—
—
–40
—
+85
Notes:
1. The I/O Supply Voltage (VIO) must be less than or equal to the Core Supply Voltage (VDD).
2. For C8051F327 devices, VIO is internally connected to VDD.
3. USB Requires 3.0 V Minimum Core Supply Voltage (VDD).
4. SYSCLK must be at least 32 kHz to enable debugging.
Units
V
V
mA
mA
µA
mA
mA
µA
µA
V
MHz
ns
ns
°C
24
Rev. 1.1
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