C8051F350 View Datasheet(PDF) - Silicon Laboratories
Part Name
Description
MFG CO.
'C8051F350' PDF : 234 Pages View PDF
C8051F350/1/2/3
2. Absolute Maximum Ratings
Table 2.1. Absolute Maximum Ratings
Parameter
Ambient temperature under bias
Storage Temperature
Voltage on AIN0.0–AIN0.7, VREF+, and VREF– with respect to
DGND
Voltage on any Port 0, 1, or 2 Pin or /RST with respect to DGND
Voltage on VDD with respect to DGND
Voltage on AV+ with respect to AGND
Maximum output current sunk by any Port 0, 1, or 2 pin
Maximum output current sunk by any other I/O pin
Maximum output current sourced by any Port 0, 1, or 2 pin
Maximum output current sourced by any other I/O pin
Maximum Total current through VDD, AV+, DGND, and AGND
Min Typ
–55 —
Max
125
Units
°C
–65 —
150
°C
–0.3 — VDD + 0.3 V
–0.3 —
5.8
V
–0.3 —
4.2
V
–0.3 —
4.2
V
—
—
100
mA
—
—
50
mA
—
—
100
mA
—
—
50
mA
—
—
500
mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the devices at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Rev. 1.1
29
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