C8051F350 View Datasheet(PDF) - Silicon Laboratories
Part Name
Description
MFG CO.
'C8051F350' PDF : 234 Pages View PDF
C8051F350/1/2/3
Table 7.1. Voltage Reference Electrical Characteristics
VDD = 3.0 V; –40 to +85 °C unless otherwise specified.
Parameter
Internal Reference
Conditions
Min Typ Max Units
Output Voltage
25 °C ambient
2.35 2.45 2.50
V
VREF Short-Circuit Current
To AGND
To AV+
—
9
—
mA
—
20
—
µA
VREF Temperature Coefficient
—
15
— ppm/°C
Load Regulation
Load = 0 to 200 µA to AGND — 0.5 — ppm/µA
VREF Turn-on Time 1 (0.01%)
4.7 µF tantalum, 0.1 µF ceramic — 3.9 —
ms
bypass capacitors
VREF Turn-on Time 2 (0.01%)
0.1 µF ceramic bypass capacitor — 400 —
µs
VREF Turn-on Time 3 (0.01%)
no bypass capacitor
—
3
—
µs
Power Supply Rejection
External Reference
Input Voltage Range
(VREF+ – VREF–)
Voltage on VREF+ or VREF– pin
with respect to AGND
Input Current
VREF = 2.5 V
—
50
—
dB
1
2.5 AV+
V
0
— AV+
V
—
2
—
µA
Common Mode Rejection Ratio
Power Specifications
Internal Reference Bias and Band
Gap Generator
— 120 —
dB
— 106 135
µA
Rev. 1.1
75
Share Link: 
