C8051F391 View Datasheet(PDF) - Silicon Laboratories
Part Name
Description
MFG CO.
'C8051F391' PDF : 300 Pages View PDF
C8051F39x/37x
Table 7.7. Internal High-Frequency Oscillator Electrical Characteristics
VDD = 1.8 to 3.6 V, –40 to +105 °C (C8051F39x), –40 to +85 °C (C8051F37x), using factory-calibrated settings,
unless otherwise specified.
Parameter
Oscillator Frequency
Oscillator Supply Current
(from VDD)
Power Supply Sensitivity
Temperature Sensitivity
Condition
IFCN = 11b
25 °C, VDD = 3.0 V,
OSCICN.7 = 1,
OCSICN.5 = 0
Constant Temperature
Constant Supply
Min
Typ
Max
Unit
48
49
50
MHz
—
840
880
µA
—
0.12
—
%/V
—
90
—
ppm/°C
Table 7.8. Internal Low-Frequency Oscillator Electrical Characteristics
VDD = 1.8 to 3.6 V, –40 to +105 °C (C8051F39x), –40 to +85 °C (C8051F37x), using factory-calibrated settings,
unless otherwise specified.
Parameter
Oscillator Frequency
Oscillator Supply Current
(from VDD)
Power Supply Sensitivity
Temperature Sensitivity
Condition
OSCLD = 11b
25 °C, VDD = 3.0 V,
OSCLCN.7 = 1
Constant Temperature
Constant Supply
Min
Typ
Max
Unit
75
80
85
kHz
—
5.5
12
µA
—
0.05
—
%/V
—
160
—
ppm/°C
Table 7.9. Internal Low-Power Oscillator Electrical Characteristics
VDD = 1.8 to 3.6 V, –40 to +105 °C (C8051F39x), –40 to +85 °C (C8051F37x), using factory-calibrated settings,
unless otherwise specified.
Parameter
Oscillator Frequency
Power Supply Sensitivity
Temperature Sensitivity
Condition
Constant Temperature
Constant Supply
Min
Typ
Max
Unit
18.5
20
21.5
MHz
—
0.1
—
%/V
—
60
—
ppm/°C
Preliminary Rev. 0.71
37
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