C8051F90X View Datasheet(PDF) - Silicon Laboratories
Part Name
Description
MFG CO.
C8051F90X
Silicon Laboratories
'C8051F90X' PDF : 318 Pages View PDF
C8051F91x-C8051F90x
Table 4.2. Global Electrical Characteristics (Continued)
–40 to +85 °C, 25 MHz system clock unless otherwise specified. See "AN358: Optimizing Low Power Operation of the
‘F9xx" for details on how to achieve the supply current specifications listed in this table.
Parameter
Conditions
Min Typ
Digital Supply Current—CPU Active (Normal Mode, fetching instructions from Flash)
IDD 3, 4, 5, 6
VDD = 1.8–3.6 V, F = 24.5 MHz
(includes precision oscillator current)
— 4.0
VDD = 1.8–3.6 V, F = 20 MHz
(includes low power oscillator current)
— 3.4
VDD = 1.8 V, F = 1 MHz
VDD = 3.6 V, F = 1 MHz
(includes external oscillator/GPIO current)
— 265
— 305
VDD = 1.8–3.6 V, F = 32.768 kHz
(includes SmaRTClock oscillator current)
—
84
IDD Frequency Sensitivity3, 5, 6 VDD = 1.8–3.6 V, T = 25 °C, F < 14 MHz
(Flash oneshot active, see Section 13.6)
— 191
VDD = 1.8–3.6 V, T = 25 °C, F > 14 MHz
(Flash oneshot bypassed, see Section 13.6)
— 102
Digital Supply Current—CPU Inactive (Idle Mode, not fetching instructions from Flash)
IDD4, 6, 7
VDD = 1.8–3.6 V, F = 24.5 MHz
(includes precision oscillator current)
— 2.1
VDD = 1.8–3.6 V, F = 20 MHz
(includes low power oscillator current)
— 1.6
VDD = 1.8 V, F = 1 MHz
VDD = 3.6 V, F = 1 MHz
(includes external oscillator/GPIO current)
— 160
— 185
VDD = 1.8–3.6 V, F = 32.768 kHz (includes
SmaRTClock oscillator current)
—
82
IDD Frequency Sensitivity1,6,7 VDD = 1.8–3.6 V, T = 25 °C
—
79
Max Units
5.0
mA
—
mA
—
µA
—
µA
—
µA
— µA/MHz
— µA/MHz
3.0
mA
—
mA
—
µA
—
µA
—
µA
— µA/MHz
38
Rev. 1.0
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