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C8051F912-GD View Datasheet(PDF) - Silicon Laboratories

Part Name
Description
MFG CO.
'C8051F912-GD' PDF : 318 Pages View PDF
C8051F91x-C8051F90x
Table 4.12. Voltage Reference Electrical Characteristics
VDD = 1.8 to 3.6 V, 40 to +85 °C unless otherwise specified.
Parameter
Conditions
Min
Internal High Speed Reference (REFSL[1:0] = 11)
Output Voltage
–40 to +85 °C,
VDD = 1.8–3.6 V
1.60
VREF Turn-on Time
Supply Current
Normal Power Mode
Low Power Mode
Internal Precision Reference (REFSL[1:0] = 00, REFOE = 1)
Output Voltage
–40 to +85 °C,
VDD = 1.8–3.6 V
VREF Short-Circuit Current
1.645
Load Regulation
Load = 0 to 200 µA to AGND
VREF Turn-on Time 1
4.7 µF tantalum, 0.1 µF ceramic —
bypass, settling to 0.5 LSB
VREF Turn-on Time 2
0.1 µF ceramic bypass, settling to —
0.5 LSB
VREF Turn-on Time 3
no bypass cap, settling to 0.5 LSB —
Supply Current
External Reference (REFSL[1:0] = 00, REFOE = 0)
Input Voltage Range
0
Input Current
Sample Rate = 300 ksps; VREF = —
3.0 V
Note: Blue indicates a feature only available on ‘F912 and ‘F902 devices.
Typ
1.65
260
140
1.680
10
400
15
300
25
15
5.25
Max
1.70
1.5
1.715
VDD
Units
V
µs
µA
V
mA
µV/µA
ms
µs
µs
µA
V
µA
56
Rev. 1.0
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