C8051T600 View Datasheet(PDF) - Silicon Laboratories
Part Name
Description
MFG CO.
'C8051T600' PDF : 188 Pages View PDF
C8051T600/1/2/3/4/5/6
8. Electrical Characteristics
8.1. Absolute Maximum Specifications
Table 8.1. Absolute Maximum Ratings
Parameter
Conditions
Min Typ Max Units
Ambient temperature under bias
–55
Storage temperature
–65
Voltage on RST or any Port I/O pin VDD > 2.2 V
–0.3
(except VPP during programming) with VDD < 2.2 V
–0.3
respect to GND
Voltage on VPP with respect to GND VDD > 2.4 V
–0.3
during a programming operation
Duration of High-voltage on VPP pin VPP > (VDD + 3.6 V)
—
(cumulative)
Voltage on VDD with respect to GND Regulator in Normal Mode –0.3
Regulator in Bypass Mode –0.3
Maximum total current through VDD or
—
GND
Maximum output current sunk or
—
sourced by RST or any Port pin
—
125
°C
—
150
°C
—
5.8
V
— VDD + 3.6 V
—
7.0
V
—
10
s
—
4.2
V
—
1.98
V
—
500
mA
—
100
mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the devices at those or any other conditions above
those indicated in the operation listings of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
30
Rev. 1.2
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