C8051T602-GS View Datasheet(PDF) - Silicon Laboratories
Part Name
Description
MFG CO.
'C8051T602-GS' PDF : 168 Pages View PDF
C8051T600/1/2/3/4/5/6
Table 8.7. Internal High-Frequency Oscillator Electrical Characteristics
VDD = 1.8 to 3.6 V; TA = –40 to +85 °C unless otherwise specified. Use factory-calibrated settings.
Parameter
Conditions
Min
Typ
Max
Oscillator Frequency
Oscillator Supply Current
(from VDD)
Power Supply Variance
IFCN = 11b
25 °C, VDD = 3.0 V,
OSCICN.2 = 1
Constant Temperature
24
24.5
25
—
450
700
—
±0.02
—
Temperature Variance
Constant Supply
—
±20
—
Units
MHz
µA
%/V
ppm/°C
Table 8.8. Temperature Sensor Electrical Characteristics
VDD = 3.0 V, –40 to +85 °C unless otherwise specified.
Parameter
Conditions
Min
Linearity
—
Slope
—
Slope Error*
—
Offset
Temp = 0 °C
—
Offset Error*
Temp = 0 °C
—
Note: Represents one standard deviation from the mean.
Typ Max Units
±0.5
—
°C
3.2
— mV/°C
±80
— µV/°C
903
—
mV
±10
—
mV
Table 8.9. Voltage Reference Electrical Characteristics
VDD = 3.0 V; –40 to +85 °C unless otherwise specified.
Parameter
Input Voltage Range
Input Current
Conditions
Min Typ Max Units
0
— VDD
V
Sample Rate = 500 ksps; VREF = 2.5 V — 12 —
µA
Rev. 1.2
35
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