C8051T605-GS View Datasheet(PDF) - Silicon Laboratories
Part Name
Description
MFG CO.
'C8051T605-GS' PDF : 168 Pages View PDF
C8051T600/1/2/3/4/5/6
Table 8.4. Reset Electrical Characteristics
–40 to +85 °C unless otherwise specified.
Parameter
Conditions
Min
Typ
RST Output Low Voltage
RST Input High Voltage
RST Input Low Voltage
RST Input Pullup Current
IOL = 8.5 mA,
VDD = 1.8 V to 3.6 V
RST = 0.0 V
—
—
0.75 x VDD —
—
—
—
25
VDD POR Ramp Time
VDD Monitor Threshold (VRST)
Missing Clock Detector
Timeout
Time from last system clock
rising edge to reset initiation
—
—
1.7
1.75
400
625
Reset Time Delay
Delay between release of any
—
—
reset source and code
execution at location 0x0000
Minimum RST Low Time to
Generate a System Reset
15
—
VDD Monitor Turn-on Time
VDD Monitor Supply Current
VDD = VRST - 0.1 V
—
50
—
20
Max Units
0.6
V
—
V
0.6
VDD
50
µA
1
ms
1.8
V
900
µs
60
µs
—
µs
—
µs
30
µA
Table 8.5. Internal Voltage Regulator Electrical Characteristics
–40 to +85 °C unless otherwise specified.
Parameter
Input Voltage Range
Bias Current
Conditions
Normal Mode
Min Typ
1.8
—
—
30
Max Units
3.6
V
50
µA
Table 8.6. EPROM Electrical Characteristics
Parameter
Conditions
Min
Typ
EPROM Size
Write Cycle Time (per Byte)
C8051T600/1
C8051T602/3
C8051T604/5
C8051T606
8192*
—
4096
—
2048
—
1536
—
105
155
Programming Voltage (VPP) C8051T600/1/2/3/4/5
Programming Voltage (VPP) C8051T606
6.25
6.5
5.75
6.0
Note: 512 bytes at location 0x1E00 to 0x1FFF are not available for program storage
Max
—
—
—
—
205
6.75
6.25
Units
bytes
bytes
bytes
bytes
µs
V
V
34
Rev. 1.2
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