CC1111F32RSP View Datasheet(PDF) - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS

Part Name

Description

MFG CO.

CC1111F32RSP

Low-power sub-1 GHz RF System-on-Chip (SoC) with MCU, memory, transceiver, and USB controller

TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS 

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CC1110Fx / CC1111Fx

Parameter

Min Typ Max Unit Condition/Note

Blocking

Blocking at ±2

MHz offset, 1.2

kBaud, 868

MHz

-45

dBm Desired channel 3dB above the sensitivity limit.

Blocking at ±2

-50

dBm Desired channel 3dB above the sensitivity limit

MHz offset, 250

kBaud, 868

MHz

Blocking at ±10

MHz offset, 1.2

kBaud, 868

MHz

-33

dBm Desired channel 3dB above the sensitivity limit.

Blocking at ±10

-40

dBm Desired channel 3dB above the sensitivity limit.

MHz offset, 250

kBaud, 868

MHz

Parameter

Min Typ Max Unit Condition/Note

General

Spurious

emissions

Conducted measurement in a 50 Ω single ended load. Complies with EN

300 328, EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T-66.

Numbers are from CC1101 (same radio on CC1110 and CC1111)

Typical radiated spurious emission is -49 dB measured at the VCO

frequency.

25 MHz –

1 GHz

-68 -57 dBm Maximum figure is the ETSI EN 300 220 limit

Above 1 GHz

-66 -47 dBm Maximum figure is the ETSI EN 300 220 limit

Table 8: RF Receive Section

Supply Voltage, VDD = 2 V Supply Voltage, VDD = 3 V Supply Voltage, VDD = 3.6 V

Temperature [°C] -40

25

85

-40

25

85

-40

25

85

Sensitivity [dBm] -96.4 -94.9 -92.6 -96.1 -95.0 -92.2

-96.1

-94.5

-92.2

Table 9: Typical Variation in Sensitivity over Temperature and Supply Voltage @ 433 MHz and 250

kBaud Data Rate

SWRS033E

Page 17 of 239

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