Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Company
PNP SILICON PLANAR POWER TRANSISTOR
CFA1012
TO-220FP Fully Isolated
Plastic Package
Complementary CFC2562
High Current Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage (for 1sec, R.H.<30%,
Ta=25ºC
Collector Current
Collector Power Dissipation @Tc=25oC
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
* VISOL (a)
(b)
IC
PC
Tj
Tstg
VALUE
60
50
5
3500
1500
5
25
150
- 55 to 150
UNIT
V
V
V
VRMS
VRMS
A
W
ºC
oC
*RMS Isolation Voltage: (a) 3500 VRMS with Package in Clip Mounting Position (b) 1500 VRMS with Package
in Screw Mounting Position (for 1sec, R.H.<30%, Ta=25oC; Pulse Test: Pulse Width <300µs, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut Off Current
ICBO
VCB=50V, IE=0
Emitter Cut Off Current
IEBO
VEB=5V, IC=0
Collector Emitter Voltage
V CEO
IC=10mA, IB=0
DC Current Gain
**hFE
VCE =1V, IC =1A
hFE
VCE =1V, IC =3A
Collector Emitter Saturation Voltage
VCE (sat)
IC=3A, IB=0.15A
Base Emitter Saturation Voltage
VBE (sat)
IC=3A, IB=0.15A
Transition Frequency
Collector Output Capacitance
fT
VCE =4V, IC=1A
Cob
VCB=10V, IE=0, f=1MHz
Switching Time
Turn On Time
Storage Time
Fall Time
ton
IB1=IB2=0.15A
tstg
VCC=30V
tf
Duty Cycle < 1%
**hFE Classification
O : 70 - 140
Y: 120 - 240
MIN TYP MAX UNIT
1
µA
1
µA
50
V
70
240
30
1.0 V
1.2 V
60
MHz
170
pF
0.1
µs
1.0
µs
0.1
µs
CFA1012Rev_1 241103E
Continental Device India Limited
Data Sheet
Page 1 of 3