CHA2094B View Datasheet(PDF) - United Monolithic Semiconductors
Part Name
Description
MFG CO.
'CHA2094B' PDF : 8 Pages View PDF
CHA2094b
36-40GHz Low Noise High Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2094 is a three-stage monolithic low
noise amplifier. It is designed for a wide range
of applications, from military to commercial
communication systems.
Vds
Vds
The circuit is manufactured with a HEMT
IN
process : 0.25µm gate length, via holes through
OUT
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Vgs1&2 Vgs3
Main Features
Broadband performances : 36-40GHz
3.0dB Noise Figure
21dB gain
±1.5dB gain flatness
Low DC power consumption, 60mA @ 3.5V
Chip size : 1.72 X 1.08 X 0.10 mm
Typical on wafer measurements :
24
20
16
12
8
4
0
34 35 36 37 38 39 40 41 42
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G
Small signal gain
P1dB Output power at 1dB gain compression
NF Noise figure
Min Typ Max
36
40
18
21
5
8
3.0
4.0
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Unit
GHz
dB
dBm
dB
Ref. : DSCHA20949312 – 08-Nov.-99
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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