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CHA2266-99F View Datasheet(PDF) - United Monolithic Semiconductors

Part Name
Description
MFG CO.
CHA2266-99F
UMS
United Monolithic Semiconductors UMS
'CHA2266-99F' PDF : 8 Pages View PDF
1 2 3 4 5 6 7 8
CHA2266
12.5-17GHz Driver Amplifier
Electrical Characteristics on wafer
Tamb = +25°C, Vd = 4V
Symbol
Parameter
Fop Operating frequency range
G
Small signal gain
G Small signal gain flatness
NF Noise Figure
RLin Input return loss
RLout Output return loss
P1dB Output power at 1 dB gain compression
P3dB Saturated output power
Id small
signal
Drain bias current
Rth Thermal resistance @ Tback side=25°C
Min Typ Max Unit
12.5
17
GHz
31
34
dB
± 0.5
dB
2.5
3.0
dB
-10
-6
dB
-10
-6
dB
13.5 14.5
dBm
15
16
130
170
mA
80°C
°C/ W
Absolute maximum Ratings (1)
Symbol
Parameter
Vd
Pin
Tj max
Top
Tstg
Drain bias voltage
Maximum continuous input power overdrive
Maximum peak input power overdrive(2)
Maximum junction temperature
Operating temperature range
Storage temperature
Values
4.3
-15
+15
175
-40 to +85
-55 to +125
Unit
V
dBm
dBm
°C
°C
°C
(1) Operation of this device above any of these parameters may cause permanent damage.
(2) Duration <1s
Ref. : DSCHA22667082- 23 Mar 07
2/8
Specifications subject to change without notice
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