CHA4094-99F View Datasheet(PDF) - United Monolithic Semiconductors
Part Name
Description
MFG CO.
'CHA4094-99F' PDF : 4 Pages View PDF
CHA4094
36-40GHz High Power Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3 = 3.5Volts
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency range (1)
36
40
GHz
G
Small signal gain (1) (2)
7
9
dB
∆G
Small signal gain flatness (1) (2)
±1
dB
Is
Reverse isolation (1)
30
dB
P1db Pulsed Output power at 1dB gain compression (1)
22
dBm
VSWRin Input VSWR (1)
2.0:1
VSWRout Output VSWR (1)
2.0:1
Id
Bias current (3)
750
920
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports. In the case of a jig or a module CW mode operation, the typical output
power may be around 2dB less.
(2) Vd1, 2, 3 = 2Volts
(3) Depends on Biasing point, see application note for recommended biasing point
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg
Ta
Tstg
Parameter
Drain bias voltage
Drain bias current
Gate bias voltage
Operating temperature range
Storage temperature range
Values
Unit
4
V
1200
mA
-2 to +0.4
V
-40 to +85
°C
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHA40949349 – 15 Dec. 99
2/4
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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