CHA5051-98F View Datasheet(PDF) - United Monolithic Semiconductors
Part Name
Description
MFG CO.
CHA5051-98F
United Monolithic Semiconductors
'CHA5051-98F' PDF : 14 Pages View PDF
CHA5051
7-16GHz Medium Power Amplifier
Electrical Characteristics
Tamb.=25°C, Vd=4.5V Id=310mA
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency range
7
16
GHz
G
Small signal gain
25
dB
P1dB Pulsed output power at 1dB compression
25
dBm
P03 Output power at 3dB gain compression
NF Noise Figure
VSWRin Input VSWR
26
3
2.5:1
dBm
dB
VSWRout Output VSWR
2:1
IP3 Output IP3 from 7 to 13GHz
33
dBm
from 14 to 16GHz
29
Vd
DC voltage
4.5
V
Id
Bias current
310
mA
These values are representative for on-wafer measurements that are made without bonding wires at
the RF ports.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum Drain bias voltage
+5
V
Id
Drain bias current with Vd=4.5V
390
mA
Vg
Gate bias voltage
-2 to +0.4
V
Pin
Maximum input power overdrive (2)
+10
dBm
Tch
Maximum channel temperature
+175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA50517152 - 01 Jun 07
2/14
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
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