CHA5093-99F/00 View Datasheet(PDF) - United Monolithic Semiconductors
Part Name
Description
MFG CO.
'CHA5093-99F/00' PDF : 8 Pages View PDF
CHA5093
22-26GHz High Power Amplifier
Electrical Characteristics
Tamb = +25°C, Vd = 6V
Symbol
Parameter
Fop Operating frequency range (1)
Min Typ Max Unit
22
26
GHz
G
Small signal gain (1)
18
20
dB
∆G Small signal gain flatness (1)
±1.5
dB
Is
Reverse isolation (1)
50
dB
P1dB Pulsed output power at 1dB compression (1)
28
29
dBm
P03 Output power at 3dB gain compression
IP3
3rd order intercept point (2)
29.5
dBm
40
dBm
PAE Power added efficiency at 1dB comp.
19
%
VSWRin Input VSWR
2.3:1
VSWRout Output VSWR
2.3:1
Tj
Junction temperature for 80°C backside
170
°C
Id
Bias current
600
900
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
6
V
Id
Drain bias current
1200
mA
Vg
Gate bias voltage
-2.5 to +0.4
V
Vgd
Negative gate drain voltage ( = Vg - Vd)
-8
V
Pin
Maximum peak input power overdrive (2)
+12
dBm
Ta
Operating temperature range
-40 to +80
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA50930129 -09 May-00
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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