CHA5093TCF View Datasheet(PDF) - United Monolithic Semiconductors
Part Name
Description
MFG CO.
'CHA5093TCF' PDF : 6 Pages View PDF
CHA5093TCF
Schematic
CHA5093TCF
24-26GHz High Power Amplifier
Vd1,2
Vd3
RF IN
RF OUT
Vg1,2,3
Vd3
Typical Bias Conditions
for an ambient Temperature of +25°C
Symbol Pin No.
Parameter
Vd1,2,3 2, 4 & 8 Drain bias voltage
Vg1,2,3
10
First, second & third stages gate bias voltage
Idd
2,4 & 8 Total drain current
All other pins are not used for this device.
Values Unit
6
V
-0.4
V
600 mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vds
Drain bias voltage_small signal
6.0
V
Ids
Drain bias current_small signal
1200
mA
Vgs
Gate bias voltage
-2 to +0.4
V
Vdg
Negative Drain Gate voltage (= Vds – Vgs)
+8
V
Pin
Maximum peak input power overdrive (3)
+12
dBm
Ta
Operating temperature range (4)
-40 to +70
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) 6V recommended for up to a max of 1dB gain compression.
(3) Duration < 1s.
(4) Upper temperature limit strongly dependent on motherboard design; ratings given for
ideal thermal coupling
Ref. : DSCHA50932035 - 04-Feb.-02
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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