CHA5293A99F View Datasheet(PDF) - United Monolithic Semiconductors
Part Name
Description
MFG CO.
'CHA5293A99F' PDF : 8 Pages View PDF
CHA5293a
17-24GHz High Power Amplifier
Electrical Characteristics
Tamb = +25°C, Vd = 6V Id #800mA
Symbol
Parameter
Fop Operating frequency range (1)
Min Typ Max Unit
17
24
GHz
G
Small signal gain (1)
16
17
dB
∆G
Small signal gain flatness (1)
±1
dB
Is
Reverse isolation
50
dB
P1dB Pulsed output power at 1dB compression (1)
29
30
dBm
P03 Output power at 3dB gain compression (1)
IP3
3rd order intercept point (2)
32
dBm
42
dBm
PAE Power added efficiency at 1dB comp.
20
%
VSWRin Input VSWR (2)
3:1
VSWRout Output VSWR (2)
3:1
Tj
Junction temperature for 80°C backside
155
°C
Id
Bias current @ small signal
800 1000 mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum drain bias voltage with Pin max=12dBm
6.25
V
Id
Maximum drain bias current
1450
mA
Vg
Gate bias voltage
-2.5 to +0.4
V
Ig
Gate bias current
-5 to +5
mA
Vgd
Minimum negative gate drain voltage ( Vg - Vd)
-8
V
Pin
Maximum input power overdrive (2)
15
dBm
Tch
Maximum channel temperature
175
°C
Ta
Operating temperature range
-40 to +80
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA52932123 -03-May-02
2/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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