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CHR2292-99F View Datasheet(PDF) - United Monolithic Semiconductors

Part Name
Description
MFG CO.
CHR2292-99F
UMS
United Monolithic Semiconductors UMS
'CHR2292-99F' PDF : 6 Pages View PDF
1 2 3 4 5 6
CHR2292
17-20GHz Integrated Down Converter
GaAs Monolithic Microwave IC
Description
LO
The CHR2292 is a multifunction chip which
integrates a LO time two multiplier, a balanced
cold FET mixer, and a RF LNA. It is designed for
Q
a wide range of applications, typically commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.
GM
GB
I
The circuit is manufactured with a PM-HEMT VDM
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
VDL
GX
VGA
Main Features
Broadband performances : 17-20GHz
13dB conversion gain
4.0dB noise figure
10dBm LO input power
-10dBm RF input power (1dB gain comp.)
Low DC power consumption, 110mA@3.5V
Chip size : 2.49 X 2.13 X 0.10 mm
Main Characteristics
Tamb. = 25°C
Parameter
RF
20
16
12
8
4
0
-4
-8
-12
-16
-20
12
Gc_channel_inf_rf-
Gc_channel_inf_rf+
14
16
18
Gc_channel_sup_rf-
Gc_channel_sup_rf+
20
22
24
2*LO Frequency (GHz)
Conversion Gain for F_IF=1GHz (on wafer meas.)
P_LO=+10dBm / P_RF= -20dBm
Min Typ Max Unit
FRF
RF frequency range
FLO
LO frequency range
FIF
IF frequency range
Gc
Conversion gain
17
7.5
0.25
13
20
GHz
10
GHz
1.5 GHz
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHR22921201 -20-July-01
1/6
Specifications subject to change without notice
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