CHV2242C View Datasheet(PDF) - United Monolithic Semiconductors

Part Name

Description

MFG CO.

CHV2242C

Q-band VCO based on Ku-band Oscillator and Q-band Multiplier

United Monolithic Semiconductors 

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CHV2242c

Typical Assembly and Bias Configuration

Q-band VCO

This drawing shows an example of assembly and bias configuration. All the

transistors are internally self-biased. The positive and negative voltages can be

respectively connected together (see drawing) according to the recommended

values given in the electrical characteristics table. Due to the high value of

frequency sensitivity versus tuning voltage (around 500MHz/V), the signal

applied to V_tune port must have very low level of noise.

For the RF pads the equivalent wire bonding inductance (diameter=25µm) has to

be according to the following recommendation.

Port

ERC1 (11)

ERC2 (1)

RF_out (2)

Equivalent inductance

(nH)

L_erc1 = 0.4

L_erc2 = 0.4

L_out = 0.28

Approximated wire

length (mm)

0.5

0.5

0.35

For a micro-strip configuration a hole in the substrate is recommended for chip

assembly.

Ref. : DSCHV2242c6354 - 20 Dec 06

4/9

Specifications subject to change without notice

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Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

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