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CHX2095A99F00 View Datasheet(PDF) - United Monolithic Semiconductors

Part Name
Description
MFG CO.
CHX2095A99F00
UMS
United Monolithic Semiconductors UMS
'CHX2095A99F00' PDF : 8 Pages View PDF
1 2 3 4 5 6 7 8
CHX2095a99F
7.5-30GHz Frequency Multiplier
Electrical Characteristics
Tamb = +25°C, Vd = 3.5V
Vg1 = Vg2 = -0.9V, Vg3 adjusted for Id = 75mA under RF Pin = +12dBm.
Symbol
Parameter
Min Typ. Max Unit
Fin Input frequency range
6.25
8.25 GHz
Fout Output frequency range
25.00
33.00 GHz
Pin Input power
12
dBm
Pout Output power for +12dBm input power
4xFin
8
11
14 dBm
Pout
1xFin
Fin level at the output for +12dBm input
power
(6.25 < Fin < 8.25GHz)
0
2 dBm
Pout
2xFin
2Fin level at the output for +12dBm input
power
(12.5 < 2Fin < 16.5GHz)
-10
3 dBm
Pout
3xFin
3Fin level at the output for +12dBm input
power
(18.75 < 3Fin < 24.75GHz)
0
12 dBm
Pout
5xFin
5Fin level at the output for +12dBm input
power
(31.25 < 5Fin < 41.25GHz)
0
dBm
VSWRin Input VSWR
2.5:1
VSWRout Output VSWR
2.5:1
Id
Bias current
75
mA
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
A bonding wire of typically 0.1 to 0.15nH will improve the matching at the accesses.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Supply voltage
4.0
V
Id
Supply current
150
mA
Pin Input power
20
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Ref. : DSCHX2095a6019 - 19 Jan 16
2/8
Specifications subject to change without notice
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