Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT2369
SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR
N–P N transistor
Marking
CMBT2369 = lJ
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
Collector current (d.c. value)
Total power dissipation up to Tamb = 25 °C
D.C. current gain
IC = 10mA; VCE = 1 V
IC = 100 mA; VCE = 2 V
Storage time
ICon = IBon = IBoff = 10 mA
VCB0
VCES
VCE0
IC
Ptot
hFE
hFE
ts
max.
max.
max.
max.
max.
40 V
40 V
15 V
500 mA
250 mW
40 to 120
>
20
<
13 ns
Continental Device India Limited
Data Sheet
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